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參數(shù)資料
| 型號： | HGTD2N120CNS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | HGTD2N120CNS |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
45
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
5
5.0
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
200
100
I
C
,
0
5
10
15
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
30
14
15
35
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
40
250
μ
S PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
14
16
30
25
20
10
12
15
10
5
0
8
6
4
2
0
V
CE
= 1200V
V
CE
= 400V V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD2N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA |
| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
| HGTD3N60A4 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
| HGTD3N60A4S | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
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