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參數(shù)資料
| 型號： | HGTG12N60C3D |
| 廠商： | Harris Corporation |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 第24A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | HGTG12N60C3D |
3-36
HGTG12N60C3D
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
25
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
I
C
= 15A,
V
GE
= 15V
T
C
= 25
o
C
-
1.80
2.2
V
T
C
= 150
o
C
-
2.0
2.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
100
nA
Switching SOA
SSOA
T
J
= 150
o
C,
V
GE
= 15V,
R
G
= 25
,
L = 100
μ
H
V
CE(PK)
= 480V
80
-
-
A
V
CE(PK)
= 600V
24
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25
,
L = 100
μ
H
-
14
-
ns
Current Rise Time
t
RI
-
16
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
270
400
ns
Current Fall Time
t
FI
-
210
275
ns
Turn-On Energy
E
ON
-
380
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
900
-
μ
J
Diode Forward Voltage
V
EC
I
EC
= 12A
-
1.7
2.0
V
Diode Reverse Recovery Time
t
rr
I
EC
= 12A, dI
EC
/dt = 100A/
μ
s
-
34
42
ns
I
EC
= 1.0A, dI
EC
/dt = 100A/
μ
s
-
30
37
ns
Thermal Resistance
R
θ
JC
IGBT
-
-
1.2
o
C/W
Diode
-
-
1.5
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
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|---|---|
| HGTG12N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTG12N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris 功能描述:Harris TO-247 NXC6A, NXF7D 制造商:Harris Corporation 功能描述: |
| HGTG12N60DID | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG15N1203D | 制造商:Harris Corporation 功能描述: |
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