參數(shù)資料
型號(hào)： HGTP3N60A4_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, NPT Series N-Channel IGBT
中文描述： 17 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 189K
代理商： HGTP3N60A4_NL
2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Symbol
Features
>100kHz Operation at 390V, 3A
200kHz Operation at 390V, 2.5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125
oC
12mJ EAS Capability
Low Conduction Loss
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60A4S
TO-252AA
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number.
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
C
G
E
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
August 2003
相關(guān)PDF資料
PDF描述
HGTP3N60A4D_NL 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP7N60A4_NL 600V SMPS Series N-Channel IGBT
HGXO0A-N-SM5-FREQ,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz - 50 MHz, CMOS OUTPUT
HGXO2F-N-50.0M,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT
HGXO2G-N-32.0M,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 32 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP3N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60B3D 制造商:Harris Corporation 功能描述:
HGTP3N60B3R4724 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3D 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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