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參數(shù)資料
| 型號(hào)： | HIP6604BCR |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PQCC16 |
| 封裝： | 4 X 4 MM, PLASTIC, MO-220VGGC, QFN-16 |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | HIP6604BCR |
9
FN9072.7
July 20, 2005
HIP6601B, HIP6603B, HIP6604B
Small Outline Exposed Pad Plastic Packages (EPSOIC)
INDEX
AREA
E
D
N
1
2
3
-B-
0.25(0.010)
C A
M
B S
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45
o
C
H
0.25(0.010)
B
M
M
α
P1
1
2
3
P
BOTTOM VIEW
N
TOP VIEW
SIDE VIEW
M8.15B
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.056
0.066
1.43
1.68
-
A1
0.001
0.005
0.03
0.13
-
B
0.0138
0.0192
0.35
0.49
9
C
0.0075
0.0098
0.19
0.25
-
D
0.189
0.196
4.80
4.98
3
E
0.150
0.157
3.31
3.39
4
e
0.050 BSC
1.27 BSC
-
H
0.230
0.244
5.84
6.20
-
h
0.010
0.016
0.25
0.41
5
L
0.016
0.035
0.41
0.64
6
N
α
8
8
7
0°
8°
0°
8°
-
P
-
0.094
-
2.387
11
P1
-
0.094
-
2.387
11
Rev. 3 6/05
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical enhanced
variations. Values shown are maximum size of exposed pad
within lead count and body size.
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| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
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| HIP6603BCB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601BECB | Synchronous Rectified Buck MOSFET Drivers |
| HIP6603BECB | Synchronous Rectified Buck MOSFET Drivers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6604BCR-T | 功能描述:IC DRIVER MOSF SYNC BUCK 16-QFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP6604BCRZ | 功能描述:功率驅(qū)動(dòng)器IC SYNCH-RECTIFIED BUCK MSFT DRVR 16LD RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6604BCRZ-T | 功能描述:功率驅(qū)動(dòng)器IC SYNCH-RECTIFIED BUCK MSFT DRVR 16LD RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6604CR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
| HIP6604CR-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
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