參數(shù)資料
型號(hào): HL7859MG
廠商: Hitachi,Ltd.
英文描述: Visible High Power Laser Diode
中文描述: 可見高功率激光二極管
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 27K
代理商: HL7859MG
HL7859MG
186
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Value
Unit
Optical output power
P
O
P
O
(pulse)
V
R(LD)
V
R(PD)
Topr
35
mW
Pulse optical output power
42 *
mW
Laser diode reverse voltage
2
V
Photo diode reverse voltage
30
V
Operating temperature
–10 to +60
°C
Storage temperature
Note:
Pulse condition : Pulse width = 1
μ
s, duty = 50%
Tstg
–40 to +85
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Items
Symbols Min
Typ
Max
Units
Test Conditions
Optical output power
P
O
Ith
35
mW
Kink free *
Threshold current
35
60
mA
Operating voltage
V
OP
η
s
λ
p
θ
//
2.1
2.5
V
P
O
= 35 mW
Slope efficiency
0.35
0.65
0.80
mW/mA 21 (mW) / (I
(28 mW)
– I
(7 mW)
)
nm
P
O
= 35 mW
deg.
P
O
= 35 mW
Lasing wavelength
775
785
795
Beam divergence parallel
to the junction
8
9.5
12
Beam divergence
parpendicular to the junction
θ⊥
18
23
28
deg.
P
O
= 35 mW
Monitor current
Is
0.2
2
mA
P
O
= 35 mW, V
R(PD)
= 5 V
P
O
= 5 mW, NA = 0.4
Asitgmatism
Note:
A
S
5
μ
m
Kink free is confirmed at the temperature of 25°C.
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