5
Absolute Maximum Ratings
HER
Yellow
HLMP-2400/
2700/2950
Series
Green
AlGaAs Red
HLCP-X100
Series
HLMP-2300/
2600/29XX
Series
HLMP-2500/
2800/2965
Series
Parameter
Average Power Dissipated per LED Chip
37 mW
[1]
135 mW
[2]
85 mW
[3]
135 mW
[2]
Peak Forward Current per LED Chip
45 mA
[4]
90 mA
[5]
60 mA
[5]
90 mA
[5]
Average Forward Current per LED Chip
15 mA
25 mA
20 mA
25 mA
DC Forward Current per LED Chip
15 mA
[1]
30 mA
[2]
25 mA
[3]
30 mA
[2]
Reverse Voltage per LED Chip
5 V
6 V
[6]
Operating Temperature Range
–20
°
C to +100
°
C
[7]
–40
°
C to +85
°
C
–20
°
C to +85
°
C
Storage Temperature Range
–40
°
C to +85
°
C
Lead Soldering Temperature 1.6 mm
(1/16 inch) Below Seating Plane3
260
°
C for 3 seconds
[8]
Notes:
1. Derate above 87
°
C at 1.7 mW/
°
C per LED chip. For DC operation, derate above 91
°
C at 0.8 mA/
°
C.
2. Derate above 25
°
C at 1.8 mW/
°
C per LED chip. For DC operation, derate above 50
°
C at 0.5 mA/
°
C.
3. Derate above 50
°
C at 1.8 mW/
°
C per LED chip. For DC operation, derate above 60
°
C at 0.5 mA/
°
C.
4. See Figure 1 to establish pulsed operation. Maximum pulse width is 1.5 mS.
5. See Figure 6 to establish pulsed operation. Maximum pulse width is 2 mS.
6. Does not apply to bicolor parts.
7. For operation below –20
°
C, contact your local Agilent sales representative.
8. Maximum tolerable component side temperature is 134
°
C during solder process.
Electrical/Optical Characteristics at T
A
= 25
°
C
AlGaAs Red HLCP-X100 Series
Parameter
HLCP-
Symbol
Min.
Typ.
Max.
Units
Test Conditions
A100/D100/E100
I
V
3
7.5
mcd
I
F
= 3 mA
Luminous Intensity
per Lighting Emitting
Area
[1]
B100/C100/F100/G100
6
15
mcd
H100
12
30
mcd
Peak Wavelength
λ
PEAK
645
nm
Dominant Wavelength
[2]
λ
d
637
nm
Forward Voltage per LED
V
F
1.8
2.2
V
I
F
= 20 mA
Reverse Breakdown Voltage per LED
V
R
5
15
V
I
R
= 100
μ
A
Thermal Resistance LED Junction-to-Pin
R
θ
J-PIN
250
°
C/W/
LED