參數(shù)資料
型號(hào)： HLMP-D101-N0001
英文描述： MA Motion Sensor (Area Reflective Type)
中文描述： 的T 1 3 / 4（5毫米）公司，T - 1（3毫米），高強(qiáng)度，雙異質(zhì)結(jié)AlGaAs的紅色LED燈
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 144K
代理商： HLMP-D101-N0001
3
Absolute Maximum Ratings at TA = 25°C
Parameter
Value
Peak Forward Current[1,2]
300 mA
Average Forward Current[2]
20 mA
DC Current[3]
30 mA
Power Dissipation
87 mW
Reverse Voltage (IR = 100 A)
5 V
Transient Forward Current (10
s Pulse)[4]
500 mA
LED Junction Temperature
110
°C
Operating Temperature Range
-20 to +100
°C
Storage Temperature Range
-55 to +100
°C
Wave Soldering Temperature [1.59 mm (0.063 in.) from body]
250
°C for 3 seconds
Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body]
260
°C for 5 seconds
Notes:
1. Maximum IPEAK at f = 1 kHz, DF = 6.7%.
2. Refer to Figure 6 to establish pulsed operating conditions.
3. Derate linearly as shown in Figure 5.
4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and wire bonds. It is
not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
Electrical/Optical Characteristics at TA = 25°C
Symbol
Description
Min.
Typ.
Max.
Unit
Test Condition
VF
Forward Voltage
1.8
2.2
V
IF = 20 mA
VR
Reverse Breakdown Voltage
5.0
15.0
V
IR = 100 A
λ
p
Peak Wavelength
645
nm
Measurement at Peak
λ
d
Dominant Wavelength
637
nm
Note 1
λ1/2
Spectral Line Halfwidth
20
nm
τ
S
Speed of Response
30
ns
Exponential Time
Constant, e-t/TS
C
Capacitance
30
pF
VF = 0, f = 1 MHz
R
θ
J-PIN
Thermal Resistance
260[3]
°C/W
Junction to Cathode Lead
210[4]
290[5]
η
V
Luminous Efficacy
80
Im/W
Note 2
Notes:
1. The dominant wavelength,
λ
d, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = lV/ηV, where IV is the luminous intensity in candelas and ηV is
luminous efficacy in lumens/watt.
3. HLMP-D101.
4. HLMP-D105.
5. HLMP-K101/-K105.
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