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參數(shù)資料
| 型號(hào)： | HLX6228ABF |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 128K x 8 STATIC RAM?Low Power SOI |
| 中文描述： | 128K的× 8靜態(tài)RAM？低功耗絕緣硅 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 156K |
| 代理商： | HLX6228ABF |
HLX6228
6
TAVAVR
Address Read Cycle Time
32
ns
TAVQV
Address Access Time
32
ns
TAXQX
Address Change to Output Invalid Time
3
ns
TSLQV
Chip Select Access Time
35
ns
TSLQX
Chip Select Output Enable Time
5
ns
TEHQV
Chip Enable Access Time
35
ns
TEHQX
Chip Enable Output Enable Time
5
ns
TELQZ
Chip Enable Output Disable Time
13
ns
TGLQV
Output Enable Access Time
12
ns
TGLQX
Output Enable Output Enable Time
0
ns
TGHQZ
Output Enable Output Disable Time
9
ns
READ CYCLE AC TIMING CHARACTERISTICS (1, 2)
Worst Case (4)
Symbol
Parameter
Typical
(3)
-55 to 125
°
C
Min Max
Units
(1) Key Note: This part must be Read controlled using the NCS pin: it requires that NCS returns to a high state for at least 5ns whenever there is
an address change. This 5ns pulse to high provides the part with a defined pre-charge pulse duration to ensure that the new address is latched.
The part must must be controlled in this fashion to meet the timing specifications defined.
(2) Test conditions: input switching levels,VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in the
Tester AC Timing Characteristics table, capacitive output loading C
L
>50 pF, or equivalent capacitive output loading C
L
=5 pF for TSHQZ, TELQZ
TGHQZ. For C
>50 pF, derate access times by 0.02 ns/pF (typical).
(3) Typical operating conditions: VDD=3.3 V, TA=25
°
C, pre-radiation.
(4) Worst case operating conditions: VDD=3.0 V to 3.6 V, TA= -55
°
C to 125
°
C, post total dose at 25
°
C.
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
CE
T
AVAVR
T
AVQV
T
SLQV
T
AXQX
T
SLQX
T
SHQZ
T
EHQX
T
EHQV
T
GLQX
T
GLQV
T
GHQZ
T
ELQZ
ADDRESS
(NWE = high)
DATA OUT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HLX6228ABH | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228ABN | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228ABR | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228AEF | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228AEH | 128K x 8 STATIC RAM?Low Power SOI |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HLX6228ABH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228ABN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228ABR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228AEF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228AEH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
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