參數(shù)資料
型號(hào)： HM-6561
廠商： Intersil Corporation
英文描述： 256 x 4 CMOS RAM
中文描述： 256 × 4 CMOS存儲(chǔ)器
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 143K
代理商： HM-6561
6-119
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage. . . . . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
74
o
C/W
18
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1944 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . .VCC - 2.0V to VCC
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max
TABLE 1. HM-6561/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Output Low Voltage
VOL
VCC = 4.5V,
IOL = 1.6mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V,
IOH = -0.4mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Input/Output Leakage Current
IIOZ
VCC = 5.5V,
VIO = GND or
VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Data Retention Supply Current
ICCDR
VCC = 2.0V,
E = VCC,
IO = 0mA,
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
Operating Supply Current
ICCOP
VCC = 5.5V,
(Note 2),
E = 1MHz,
W = GND,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
4
mA
Standby Supply Current
ICCSB
VCC = 5.5V,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
HM-6561/883
相關(guān)PDF資料
PDF描述
HM-6561883 256 x 4 CMOS RAM
HM1-6561883 256 x 4 CMOS RAM
HM1-65787H-2 HIGH SPEED CMOS SRAM
HM3-65787H-2 HIGH SPEED CMOS SRAM
HM4-65787H-2 HIGH SPEED CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM-6561/883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:256 x 4 CMOS RAM
HM-6561883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:256 x 4 CMOS RAM
HM-65642 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM
HM-65642/883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM
HM-65642_02 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*