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參數(shù)資料
| 型號(hào)： | HM1-6514S-9 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 1024 x 4 CMOS RAM |
| 中文描述： | 1K X 4 STANDARD SRAM, 120 ns, CDIP18 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | HM1-6514S-9 |
6-5
Timing Waveforms
The address information is latched in the on-chip registers
on the falling edge of E (T = 0). Minimum address set up and
hold time requirements must be met. After the required hold
time, the addresses may change state without affecting
device operation. During time (T = 1) the output becomes
enabled, but data is not valid until during time (T = 2). W
must remain high throughout the read cycle. After the output
data has been read, E may return high (T = 3). This will dis-
able the output buffer and all inputs, and ready the RAM for
the next memory cycle (T = 4).
(8)
(7) TAVEL
(6)
(4) TEHQZ
HIGH Z
VALID DATA OUT
(6)
HIGH Z
TAVEL
(7)
-1
TIME
0
1
2
3
4
5
REFERENCE
(2) TAVQV
(17) TELEL
TELAX
NEXT ADD
TEHEL
(2) TAVQY
TEHEL
(5) TELEH
(1) TELQV
(3) TELQX
DQ
W
E
A
FIGURE 1. READ CYCLE
VALID ADD
TRUTH TABLE
TIME
REFERENCE
INPUTS
DATA I/O
DQ
FUNCTION
E
W
A
-1
H
X
X
Z
Memory Disabled
0
H
V
Z
Cycle Begins, Addresses are Latched
1
L
H
X
X
Output Enabled
2
L
H
X
V
Output Valid
3
H
X
V
Read Accomplished
4
H
X
X
Z
Prepare for Next Cycle (Same as -1)
5
H
V
Z
Cycle Ends, Next Cycle Begins (Same as 0)
HM-6514
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM-6514 | 1024 x 4 CMOS RAM |
| HM3-6514-9 | 1024 x 4 CMOS RAM |
| HM3-6514S-9 | RES THICK FILM 10M OHM 5.0W 5% |
| HM4-6514-B | 1024 x 4 CMOS RAM |
| HM-6514883 | 1024 x 4 CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM1-6516 DIE | 制造商:Harris Corporation 功能描述: |
| HM1-6516 WAF | 制造商:Harris Corporation 功能描述: |
| HM1-6516/883 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:2K x 8 CMOS RAM |
| HM1-65161-2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SRAM |
| HM1-65161-5 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SRAM |
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