參數(shù)資料
型號(hào): HM5117805J-6
廠商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: 16M EDO DRAM(2-Mword*8-bit) 2k Refresh
中文描述: 2M X 8 EDO DRAM, 60 ns, PDSO28
封裝: 0.400 INCH, PLASTIC, SOJ-28
文件頁(yè)數(shù): 13/32頁(yè)
文件大?。?/td> 549K
代理商: HM5117805J-6
EO rdc
HM5117805 Series
Data Sheet E0156H10
13
20.Data output turns off and becomes high impedance from ater rising edge of
RAS
and
CAS
. Hold
time and turn off time are specified by the timing specifications of later rising edge of
RAS
and
CAS
between t
OHR
and t
OH
and between t
OFR
and t
OFF
.
21.Please do not use t
RASS
timing, 10 μs
t
RASS
100 μs. During this period, the device is in transition
state from normal operation mode to self refresh mode. If t
RASS
100 μs, then
RAS
precharge time
should use t
RPS
instead of t
RP
.
22.If you use
RAS
only refresh or CBR burst refresh mode in normal read/write cycles, 2048 cycles of
distributed CBR refresh with 15.6 μs interval should be executed within 32 ms immediately after
exiting from and before entering into the self refresh mode.
23.If you use distributed CBR refresh mode with 15.6 μs interval in normal read/write cycle, CBR
refresh should be executed within 15.6 μs immediately after exiting from and before entering into
self refresh mode.
24.Repetitive self refresh mode without refreshing all memory is not allowed. Once you exit from self
fresh mode, all memory cells need to be refreshed before re-entering the self refresh mode again.
25.XXX: H or L (H: V
IH
(min)
V
IN
V
IH
(max), L: V
IL
(min)
V
IN
V
IL
(max))
///////: Invalid Dout
When the address, clock and input pins are not described on timing waveforms, their pins must be
applied V
IH
or V
IL
.
相關(guān)PDF資料
PDF描述
HM5117805J-7 16 M EDO DRAM(2-Mword*8-bit) 2 k Refresh
HM5117805LJ-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LS-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LS-6 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LS-7 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5117805J-7 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-5 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-7 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LS-5 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh