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參數(shù)資料
| 型號： | HM5117805TT-5 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| 中文描述： | 2M X 8 EDO DRAM, 50 ns, PDSO28 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-28 |
| 文件頁數(shù)： | 32/32頁 |
| 文件大?。?/td> | 549K |
| 代理商： | HM5117805TT-5 |
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HM5117805 Series
Data Sheet E0156H10
32
Cautions
1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any
third party’s patent, copyright, trademark, or other intellectual property rights for information contained
in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third
party’s rights, including intellectual property rights, in connection with use of the information contained
in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, contact Elpida Memory, Inc. before using the product in an application that demands especially
high quality and reliability or where its failure or malfunction may directly threaten human life or cause
risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc.
particularly for maximum rating, operating supply voltage range, heat radiation characteristics,
installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or
damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally
foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such
as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily
injury, fire or other consequential damage due to operation of the Elpida Memory, Inc. product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Elpida Memory, Inc..
7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc.
semiconductor products.
相關PDF資料 |
PDF描述 |
|---|---|
| HM5117805TT-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM5117805TT-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM5117805LTT-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM5117805 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM5117805LTS-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HM5117805TT-6 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM5117805TT-7 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
| HM51180J | 制造商:TT Electronics / BI Technologies 功能描述:Inductor Power Wirewound 18uH 5% 1KHz 4.7A 23mOhm DCR AXL 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 18uH 5% 1KHz 4.7A AXL |
| HM51-180JLF | 制造商:BITECH 制造商全稱:Bi technologies 功能描述:Axially Leaded Miniature Power Inductors |
| HM51180K | 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 18uH 10% 1KHz 4.7A AXL |
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