參數(shù)資料
型號(hào): HM514260CLTT-8
廠商: Hitachi,Ltd.
英文描述: 262,144-word x 16-bit Dynamic Random Access Memory
中文描述: 262,144字× 16位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁(yè)數(shù): 8/27頁(yè)
文件大?。?/td> 260K
代理商: HM514260CLTT-8
HM514260C, HM51S4260C Series
8
DC Characteristics
(Ta = 0 to 70
°
C, V
CC
= 5 V
±
5%, V
SS
= 0 V) (HM51(S)4260C-6R)
(Ta = 0 to 70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
(HM51(S)4260C-6/7/8) (cont)
HM514260C, HM51S4260C
-6/-6R
-7
-8
Parameter
Symbol Min
Max Min
Max Min
Max Unit
Test Conditions
Input leakage
current
I
LI
10
10
10
10
10
10
μ
A
0 V
Vin
6.5 V
Output leakage
current
I
LO
10
10
10
10
10
10
μ
A
0 V
Vout
6.5 V, Dout = disable
Output high voltage V
OH
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
UCAS
and
LCAS
= V
IH
.
4. V
IH
V
CC
0.2 V, 0
V
IL
0.2 V, Address can be changed once or less while
RAS
= V
IL
5. All the V
pins shall be supplied with the same voltage. And all the V
SS
pins shall be supplied with
the same voltage.
2.4
V
CC
0.4
2.4
V
CC
0.4
2.4
V
CC
0.4
V
High Iout =
5.0 mA
V
OL
0
0
0
V
Low Iout = 4.2 mA
Capacitance
(Ta = +25
°
C, V
CC
= 5 V
±
5%) (HM51(S)4260C-6R)
(Ta = +25
°
C, V
CC
= 5 V
±
10%) (HM51(S)4260C-6/7/8)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
C
I1
C
I2
C
I/O
5
pF
1
Input capacitance (Clocks)
7
pF
1
Output capacitance (Data-in, Data-out)
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
UCAS
and
LCAS
= V
IH
to disable Dout
10
pF
1, 2
相關(guān)PDF資料
PDF描述
HM514260CTT-6 262,144-word x 16-bit Dynamic Random Access Memory
HM514260CTT-6R 262,144-word x 16-bit Dynamic Random Access Memory
HM514260CTT-7 262,144-word x 16-bit Dynamic Random Access Memory
HM514260CTT-8 262,144-word x 16-bit Dynamic Random Access Memory
HM514260C 262,144-word x 16-bit Dynamic Random Access Memory
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