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參數(shù)資料
| 型號(hào)： | HM6264BLPI-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
| 中文描述： | 64k的靜態(tài)存儲(chǔ)器（8 KWord的× 8位）寬溫版本 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 82K |
| 代理商： | HM6264BLPI-10 |
HM6264B Series
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
*1
Max
Unit
Test conditions
*4
CS1
≥
V
CC
–0.2 V,
CS2
≥
V
CC
–0.2 V or CS2
≤
0.2 V
V
= 3.0 V, 0 V
≤
Vin
≤
V
CC
CS1
≥
V
–0.2 V, CS2
≥
V
CC
–0.2 V
or 0 V
≤
CS2
≤
0.2 V
V
CC
for data retention
V
DR
2.0
—
—
V
Data retention current
I
CCDR
—
1
*1
25
*2
μ
A
Chip deselect to data
retention time
t
CDR
0
—
—
ns
See retention waveform
Operation recovery time
Notes: 1. Reference data at Ta = 25
°
C.
2. 10
μ
A max at Ta = 0 to + 40
°
C.
3. t
RC
= read cycle time.
4. CS2 controls address buffer,
WE
buffer,
CS1
buffer,
OE
buffer, and Din buffer. If CS2 controls
data retention mode, Vin levels (address,
WE
,
OE
,
CS1
, I/O) can be in the high impedance
state. If
CS1
controls data retention mode, CS2 must be CS2
≥
V
– 0.2 V or 0 V
≤
CS2
≤
0.2
V. The other input levels (address,
WE
,
OE
, I/O) can be in the high impedance state.
t
R
t
RC
*3
—
—
ns
Low V
CC
Data Retention Timing Waveform (1)
(
CS1
Controlled)
t
CDR
t
R
Data retention mode
CS1
≥
V
CC
– 0.2 V
V
CC
4.5 V
2.2 V
V
DR
0 V
CS1
Low V
CC
Data Retention Timing Waveform (2)
(CS2 Controlled)
Data retention mode
t
R
t
CDR
CS2
≤
0.2 V
V
CC
4.5 V
V
DR
0 V
CS2
0.4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM6264BLPI-12 | 64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
| HM6264BLSP-10L | Data Selectors/Multiplexers 16-CDIP -55 to 125 |
| HM6264BLSP-8L | Data Selectors/Multiplexers 20-LCCC -55 to 125 |
| HM6264BLFP-10 | 64 k SRAM (8-kword x 8-bit) |
| HM6264BLFP-10LT | 64 k SRAM (8-kword x 8-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM6264BLPI-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
| HM6264BLS-10L | 制造商:Hitachi 功能描述: |
| HM6264BLSP-10L | 制造商:Renesas Electronics 功能描述:8k~8 100ns 5V DIP Bulk |
| HM6264BLSP-8L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k SRAM (8-kword x 8-bit) |
| HM6264FP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:8192-word x 8-bit High Speed CMOS Static RAM |
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