參數(shù)資料
型號: HM628100I
廠商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)
中文描述: 寬溫版本八米的SRAM(1024 - KWord的× 8位)
文件頁數(shù): 3/17頁
文件大?。?/td> 91K
代理商: HM628100I
HM628100I Series
Wide Temperature Range Version
8 M SRAM (1024-kword
×
8-bit)
ADE-203-1302B (Z)
Rev. 1.0
Sep. 25, 2002
Description
The Hitachi HM628100I Series is 8-Mbit static RAM organized 1,048,576-word
×
8-bit. HM628100I Series
has realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable
for battery backup systems. It is packaged in standard 44-pin TSOP II for high density surface mounting.
Features
Single 5.0 V supply: 5.0 V
±
10
%
Fast access time: 55 ns (max)
Power dissipation:
Active: 10 mW/MHz (typ)
Standby: 7.5
μ
W (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85
°
C
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