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參數(shù)資料
| 型號(hào)： | HM62832UHLP-20 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 k High Speed SRAM (32-kword 8-bit) |
| 中文描述： | 256畝高速SRAM（32 KWord的8位） |
| 文件頁(yè)數(shù)： | 5/13頁(yè) |
| 文件大小： | 114K |
| 代理商： | HM62832UHLP-20 |
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HM62832UH Series
5
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
Parameter
Symbol
Min
Typ
*1
Max
Unit
Test Conditions
Input leakage current
|I
LI
|
—
—
2.0
μ
A
V
= 5.5 V
Vin = V
SS
to V
CC
CS
= V
IH
V
I/O
= V
SS
to V
CC
min cycle
*2
Output leakage current
|I
LO
|
—
—
2.0
μ
A
Operating V
CC
current
I
CC1
(-15)
*3
I
CC2
(-15)
I
CC1
(-20)
I
CC2
(-20)
I
SB
(-15)
I
SB
(-20)
I
SB1
(L-version) —
—
135
170
mA
—
100
120
mA
2x min cycle
—
120
150
mA
min cycle
—
90
110
mA
2x min cycle
CS
= V
IH
, min cycle
Standby V
CC
current
—
40
60
mA
—
30
50
Standby V
CC
current (1)
0.02
2.0
mA
CS
≥
V
– 0.2 V
0 V
≤
Vin
≤
0.2 V or
V
CC
– 0.2 V
≤
Vin
—
0.003
0.1
Output low voltage
V
OL
V
OH
—
—
0.4
V
I
OL
= 8 mA
I
OH
= –4.0 mA
Output high voltage
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = 25
°
C and not guaranteed.
2.
CS
= V
IL
, Iout = 0 mA
3. Access time version
2.4
—
—
V
Capacitance
(Ta = 25
°
C, f = 1.0 MHz)
*1
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
Cin
—
—
6
pF
Vin = 0 V
Output capacitance
Note:
1. This parameter is sampled and not 100% tested.
Cout
—
—
10
pF
V
I/O
= 0 V
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| HM62832UHP-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256 k High Speed SRAM (32-kword 8-bit) |
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