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參數(shù)資料
| 型號： | HM628511HCJP-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 64K |
| 代理商： | HM628511HCJP-10 |
HM628511HI Series
5
DC Characteristics
(Ta = –40 to +85
°
C, V
CC
= 5.0 V
±
10 %, V
SS
= 0V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
II
LI
I
II
LO
I
—
—
2
μ
A
μ
A
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
, lout = 0 mA
Other inputs = V
IH
/V
IL
Output leakage current
—
—
2
Operation power
supply current
12 ns cycle I
CC
—
—
160
mA
15 ns cycle I
CC
12 ns cycle I
SB
—
—
140
Standby power supply
current
—
—
60
mA
Min cycle,
CS
= V
,
Other inputs = V
IH
/V
IL
15 ns cycle I
SB
—
—
50
I
SB1
—
0.1
5
mA
f = 0 MHz
V
≥
CS
≥
V
CC
- 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
- 0.2 V
I
OL
= 8 mA
I
OH
= –4 mA
Output voltage
V
OL
V
OH
—
—
0.4
V
2.4
—
—
V
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and not guaranteed.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
—
—
6
pF
Vin = 0 V
Input/output capacitance*
1
Note: 1. This parameter is sampled and not 100% tested.
C
I/O
—
—
8
pF
V
I/O
= 0 V
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| HM628511HI | 4M High Speed SRAM (512-kword x 8-bit) |
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| HM628512ALTTI | 524288-word x 8-bit High Speed CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628511HCJP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device |
| HM628511HCJPI-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
| HM628511HCLJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HCLJP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
| HM628511HI | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
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