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參數(shù)資料
| 型號： | HM628511HLJP-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HM628511HLJP-10 |
HM628511H Series
7
Write Cycle
HM628511H
-10
-12
-15
Parameter
Symbol Min
Max
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
10
—
12
—
15
—
ns
Address valid to end of write
7
—
8
—
10
—
ns
Chip select to end of write
7
—
8
—
10
—
ns
9
Write pulse width
7
—
8
—
10
—
ns
8
Address setup time
0
—
0
—
0
—
ns
6
Write recovery time
0
—
0
—
0
—
ns
7
Data to write time overlap
5
—
6
—
7
—
ns
Data hold from write time
0
—
0
—
0
—
ns
Write disable to output in low-Z
3
—
3
—
3
—
ns
1
Output disable to output in high-Z
—
5
—
6
—
7
ns
1
Write enable to output in high-Z
Note: 1. Transition is measured
±
200 mV from steady voltage with Load (B). This parameter is sampled
and not 100% tested.
2. Address should be valid prior to or coincident with
CS
transition low.
3.
WE
and/or
CS
must be high during address transition time.
4. if
CS
and
OE
are low during this period, I/O pins are in the output state. Then, the data input
signals of opposite phase to the outputs must not be applied to them.
5. If the
CS
low transition occurs simultaneously with the
WE
low transition or after the
WE
transition,
output remains a high impedance state.
6. t
AS
is measured from the latest address transition to the later of
CS
or
WE
going low.
7. t
WR
is measured from the earlier of
CS
or
WE
going high to the first address transition.
8. A write occurs during the overlap of a low
CS
and a low
WE
. A write begins at the latest transition
among
CS
going low and
WE
going low. A write ends at the earliest transition among
CS
going
high and
WE
going high. t
WP
is measured from the beginnig of write to the end of write.
9. t
CW
is measured from the later of
CS
going low to the the end of write.
—
5
—
6
—
7
ns
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM628511HLJP-12 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HLJP-15 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628511H | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HJPI-12 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HJPI-15 | 4M High Speed SRAM (512-kword x 8-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628511HLJP-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HLJP-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628512 | 制造商:HITACHI-METALS 制造商全稱:Hitachi Metals, Ltd 功能描述:524288-word x 8-bit High Speed CMOS Static RAM |
| HM628512A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M SRAM (512 KWORD X 8 BIT) |
| HM628512AI | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:524288-word x 8-bit High Speed CMOS Static RAM |
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