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參數(shù)資料
| 型號： | HM62A16256CBPI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位)) |
| 中文描述： | 四米的SRAM（256 - KWord的× 16位）（4分靜態(tài)隨機(jī)存儲器（256k字× 16位）） |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 125K |
| 代理商： | HM62A16256CBPI |
HM62A16256CBPI Series
6
DC Characteristics
Parameter
Symbol Min
Typ
*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
—
—
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS1
= V
or CS2 = V
or
OE
= V
IH
or
WE
= V
IL
, or
L B
=
UB
=V
IH
V
I/O
= V
SS
to V
CC
CS1
= V
, CS2 = V
,
Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
= 0 mA,
CS1
= V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Cycle time = 1
μ
s, duty = 100%,
I
= 0 mA,
CS1
≤
0.2 V,
CS2
≥
V
CC
– 0.2 V
V
IH
≥
V
CC
– 0.2 V, V
IL
≤
0.2 V
CS2 = V
IL
0 V
≤
Vin
(1) 0 V
≤
CS2
≤
0.2 V or
(2)
CS1
≥
V
CC
– 0.2 V,
CS2
≥
V
CC
– 0.2 V
Output leakage current
—
—
1
Operating current
I
CC
—
—
2
mA
Average operating current
I
CC1
—
—
25
mA
I
CC2
—
—
3
mA
Standby current
I
SB
I
SB1
*
2
—
—
0.3
mA
Standby current
—
0.5
5
μ
A
I
SB1
*
3
V
OH
V
OL
—
0.5
2
μ
A
Output high voltage
V
CC
– 0.2—
—
—
V
I
OH
= –100
μ
A
I
OL
= 100
μ
A
Output low voltage
Notes: 1. Typical values are at V
CC
= 1.8 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
3. This characteristic is guaranteed only for L-SL version.
—
0.2
V
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
—
—
10
pF
V
I/O
= 0 V
1
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