參數(shù)資料
型號: HM62V16256CLTTI-7
廠商: Hitachi,Ltd.
英文描述: Wide Temperature Range Version4 M SRAM (256-kword x 16-bit)
中文描述: 寬溫版本4 M的SRAM(256 - KWord的x 16位)
文件頁數(shù): 6/18頁
文件大?。?/td> 77K
代理商: HM62V16256CLTTI-7
HM62V16256CI Series
6
DC Characteristics
Parameter
Symbol Min
Typ
*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
1
μA
Vin = V
SS
to V
CC
CS1
= V
or CS2 = V
IL
or
OE
= V
IH
or
WE
= V
IL
or
L B
=
UB
= V
IH
,
V
I/O
= V
SS
to V
CC
CS1
= V
, CS2 = V
,
Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
= 0 mA,
CS1
= V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Cycle time = 1 μs, duty = 100%,
I
= 0 mA,
CS1
0.2 V,
CS2
V
CC
– 0.2 V
V
IH
V
CC
– 0.2 V, V
IL
0.2 V
CS2 = V
IL
0 V
Vin
(1) 0 V
CS2
0.2 V or
(2)
CS1
V
CC
– 0.2 V,
CS2
V
CC
– 0.2 V or
(3)
LB
=
UB
V
– 0.2 V
CS2
V
– 0.2 V
CS1
0.2 V
Output leakage current
1
μA
Operating current
I
CC
5
20
mA
Average operating current
I
CC1
15
30
mA
I
CC2
2
5
mA
Standby current
I
SB
I
SB1
*
2
0.01
0.3
mA
Standby current
0.8
20
μA
Output high
voltage
V
CC
=2.2 V to 2.7 V V
OH
2.0
V
I
OH
= –0.5 mA
V
CC
=2.7 V to 3.6 V V
OH
V
CC
=2.2 V to 3.6 V V
OH
V
CC
=2.2 V to 2.7 V V
OL
2.4
V
I
OH
= –1 mA
I
OH
= –100 μA
I
OL
= 0.5 mA
V
CC
– 0.2—
V
Output low
voltage
0.4
V
V
CC
=2.7 V to 3.6 V V
OL
V
CC
=2.2 V to 3.6 V V
OL
0.4
V
I
OL
= 2 mA
I
OL
= 100 μA
0.2
V
Notes: 1. Typical values are at V
CC
= 2.5 V/3.0 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
相關PDF資料
PDF描述
HM62V16256CLBP-5 4 M SRAM (256-kword x16-bit)
HM62V16256CLBP-5SL 4 M SRAM (256-kword x16-bit)
HM62V16256CLBP-7 4 M SRAM (256-kword x16-bit)
HM62V16256CLBP-7SL 4 M SRAM (256-kword x16-bit)
HM62V16256CLTT-5 4 M SRAM (256-kword x 16-bit)
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