參數(shù)資料
型號: HM62V16258BLTT-7SL
廠商: Hitachi,Ltd.
英文描述: 4 M SRAM (256-kword x 16-bit)
中文描述: 四米的SRAM(256 - KWord的x 16位)
文件頁數(shù): 6/16頁
文件大?。?/td> 74K
代理商: HM62V16258BLTT-7SL
HM62V16258B Series
6
DC Characteristics
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
or
WE
= V
IL
or,
L B
=
UB
=V
IH
, V
I/O
= V
SS
to V
CC
CS
= V
IL
, Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
I/O
= 0 mA,
CS
= V
IL
, Others = V
IH
/V
IL
Output leakage current
1
Operating current
I
CC
20
mA
Average
operating
current
HM62V16258B-7 I
CC1
70
mA
HM62V16258B-8 I
CC1
65
mA
I
CC2
3
15
mA
Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA,
CS
0.2 V,
V
IH
V
CC
– 0.2 V, V
IL
0.2 V
CS
= V
IH
0 V
Vin
CS
V
CC
– 0.2 V
Standby current
I
SB
I
SB1
*
2
0.3
mA
Standby current
1
40
μ
A
I
SB1
*
3
V
OH
1
20
μ
A
Output high voltage
2.4
V
I
OH
= –1 mA
I
OH
= –100
μ
A
I
OL
= 2 mA
I
OL
= 100
μ
A
V
CC
– 0.2—
V
Output low voltage
V
OL
0.4
V
0.2
V
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
相關PDF資料
PDF描述
HM62V16258BLTT-8 4 M SRAM (256-kword x 16-bit)
HM62V16258BLTT-8SL 4 M SRAM (256-kword x 16-bit)
HM62V16258B 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位))
HM62V16258CI 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位))
HM62V16258C 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位))
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