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參數(shù)資料
| 型號： | HM62V16514LTTI-5 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit) |
| 中文描述： | 寬溫版本八米的SRAM（512 - KWord的x 16位） |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 97K |
| 代理商： | HM62V16514LTTI-5 |
HM62V16514I Series
6
DC Characteristics
Parameter
Symbol Min
Typ
*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
—
—
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
IH
or
WE
= V
IL
or,
L B
=
UB
=V
IH
,
V
I/O
= V
SS
to V
CC
CS
= V
, Others = V
IH
/V
IL
,
I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
= 0 mA,
CS
= V
IL
,
Others = V
IH
/V
IL
Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA,
CS
≤
0.2 V,
V
IH
≥
V
CC
– 0.2 V, V
IL
≤
0.2 V
CS
= V
IH
0 V
≤
Vin
(1)
CS
≥
V
CC
– 0.2 V or
(2)
LB
=
UB
≥
V
CC
– 0.2 V,
CS
≤
0.2 V
Output leakage current
—
—
1
Operating current
I
CC
—
—
20
mA
Average operating current
I
CC1
—
16
30
mA
I
CC2
—
2
5
mA
Standby current
I
SB
I
SB1
*
2
—
0.1
0.3
mA
Standby current
—
0.5
25
μ
A
I
SB1
*
3
V
OH
V
OL
—
0.5
10
μ
A
Output high voltage
2.2
—
—
V
I
OH
= –1 mA
I
OL
= 2 mA
Output low voltage
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L version.
3. This characteristic is guaranteed only for L-SL version.
—
—
0.4
V
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
—
—
10
pF
V
I/O
= 0 V
1
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PDF描述 |
|---|---|
| HM62V16514LTTI-5SL | Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit) |
| HM62V16514I | Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit) |
| HM62V8100I | Wide Temperature Range Version 8 M SRAM (1024-kword ?8-bit) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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