參數(shù)資料
型號(hào)： HM62V8512BLRR-8
廠商： Hitachi,Ltd.
元件分類： SRAM
英文描述： 4 M SRAM (512-kword x 8-bit)
中文描述： 四米的SRAM（512 - KWord的× 8位）
文件頁(yè)數(shù)： 6/17頁(yè)
文件大?。?/td> 77K
代理商： HM62V8512BLRR-8
HM62V8512B Series
6
DC Characteristics
(Ta = –20 to +70
°
C, V
CC
= 2.7 V to 3.6 V, V
SS
= 0 V)
Parameter
Symbol
Min
Typ*
1
Max
Unit Test conditions
Input leakage current
|I
LI
|
|I
LO
|
—
—
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
or
WE
= V
IL
, V
I/O
= V
SS
to V
CC
CS
= V
,
others = V
IH
/V
IL
, I
I/O
= 0 mA
Min cycle, duty = 100%
CS
= V
, others = V
IH
/V
IL
I
I/O
= 0 mA
Cycle time = 1
μ
s,
duty = 100%
I
I/O
= 0 mA,
CS
≤
0.2 V
V
IH
≥
V
– 0.2 V,
V
IL
≤
0.2 V
CS
= V
IH
Output leakage current
—
—
1
Operating power
supply current: DC
I
CC
—
—
10
mA
Operating
power supply current
I
CC1
—
—
40
mA
Operating power
supply current
I
CC2
—
5
10
mA
Standby power supply
current: DC
I
SB
—
0.1
0.3
mA
Standby power supply
current (1): DC
I
SB1
—
1*
2
40*
2
μ
A
Vin
≥
0 V,
CS
≥
V
CC
– 0.2 V
—
1*
3
20*
3
μ
A
μ
A
—
1*
4
5*
4
Output low voltage
V
OL
—
—
0.4
V
I
OL
= 2.1 mA
I
OL
= 100
μ
A
I
OH
= –100
μ
A
I
OH
= –1.0 mA
—
—
0.2
V
Output high voltage
V
OH
V
CC
– 0.2 —
2.4
—
V
—
—
V
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L version.
3. This characteristics is guaranteed only for L-SL version.
4. This characteristics is guaranteed only for L-UL version.
Capacitance
(Ta = +25
°
C, f = 1 MHz)
Parameter
Symbol
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
—
8
pF
Vin = 0 V
Input/output capacitance*
1
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
—
10
pF
V
I/O
= 0 V
相關(guān)PDF資料
PDF描述
HM62V8512BLRR-8SL 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL Quadruple Bus Buffer Gate With 3-State Outputs 14-PDIP -40 to 85
HM62V8512BLTT-7UL 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-8 4 M SRAM (512-kword x 8-bit)
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