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參數(shù)資料
| 型號(hào)： | HM62V8512CLFP-5SL |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4 M SRAM (512-kword x 8-bit) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HM62V8512CLFP-5SL |
HM62V8512C Series
6
DC Characteristics
Parameter
Symbol
Min
Typ*
1
Max
Unit Test conditions
Input leakage current
|I
LI
|
|I
LO
|
—
—
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
or
WE
= V
IL
, V
I/O
= V
SS
to V
CC
CS
= V
,
others = V
IH
/V
IL
, I
I/O
= 0 mA
Min cycle, duty = 100%
CS
= V
, others = V
IH
/V
IL
I
I/O
= 0 mA
Output leakage current
—
—
1
Operating power
supply current: DC
I
CC
—
5
10
mA
Operating
power supply
current
HM62V8512C-5 I
CC1
—
18
35
mA
HM62V8512C-7 I
CC1
—
15
30
mA
Operating power
supply current
I
CC2
—
2
10
mA
Cycle time = 1
μ
s,
duty = 100%
I
I/O
= 0 mA,
CS
≤
0.2 V
V
IH
≥
V
– 0.2 V,
V
IL
≤
0.2 V
CS
= V
IH
Standby power supply
current: DC
I
SB
—
0.1
0.3
mA
Standby power supply
current (1): DC
I
SB1
—
0.8*
2
20*
2
μ
A
Vin
≥
0 V,
CS
≥
V
CC
– 0.2 V
—
0.8*
3
10*
3
μ
A
Output low voltage
V
OL
—
—
0.4
V
I
OL
= 2.1 mA
I
OL
= 100
μ
A
I
OH
= –100
μ
A
I
OH
= –1.0 mA
—
—
0.2
V
Output high voltage
V
OH
V
CC
– 0.2 —
2.4
—
V
—
—
V
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L version.
3. This characteristics is guaranteed only for L-SL version.
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
—
8
pF
Vin = 0 V
Input/output capacitance*
1
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
—
10
pF
V
I/O
= 0 V
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