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參數(shù)資料
| 型號(hào)： | HM62W1400H |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字 ×1位)) |
| 中文描述： | 4分高速SRAM（4 Mword × 1位）（4分高速靜態(tài)隨機(jī)存儲(chǔ)器（4分字× 1位）） |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大小： | 335K |
| 代理商： | HM62W1400H |
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HM62W1400H Series
4
Block Diagram
A11A9A10A20
(LSB)
V
CC
V
SS
Memory matrix
256 rows
×
64 columns
×
256 blocks
×
1 bit
(4,194,304 bits)
Row
decoder
Column I/O
Column decoder
Din
CS
WE
OE
A5
Dout
A2
A18
A8
A12
A17
A3
A7
A6
(MSB)
(LSB)
CS
CS
A21 A0 A13 A14 A15 A1 A19 A16 A4
CS
(MSB)
Operation Table
CS
OE
WE
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout
Ref. cycle
H
×
×
Standby
High-Z
—
L
H
H
Output disable
High-Z
—
L
L
H
Read
Dout
Read cycle (1) to (3)
L
H
L
Write
High-Z
Write cycle (1)
L
Note:
L
L
Write
High-Z
Write cycle (2)
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +4.6
V
–0.5*
1
to V
CC
+0.5*
2
1.0
V
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
Tbias
–10 to +85
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