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參數(shù)資料
| 型號(hào)： | HM62Y16258BLTT-8 |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HM62Y16258BLTT-8 |
HM62Y16258B Series
5
Operation Table
CS
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
×
×
×
×
High-Z
High-Z
Standby
×
H
H
High-Z
High-Z
Standby
L
H
L
L
L
Dout
Dout
Read
L
H
L
H
L
Dout
High-Z
Lower byte read
L
H
L
L
H
High-Z
Dout
Upper byte read
L
L
×
×
×
L
L
Din
Din
Write
L
L
H
L
Din
High-Z
Lower byte write
L
L
L
H
High-Z
Din
Upper byte write
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
H
H
×
×
High-Z
High-Z
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Tstg
–0.2 to + 4.0
V
–0.2*
1
to V
CC
+ 0.3*
2
0.7
V
W
Storage temperature range
–55 to +125
°
C
°
C
Storage temperature range under bias
Notes: 1. V
T
min: –1.5 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.0 V.
Tbias
–10 to +85
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
V
SS
V
IH
V
IL
Ta
2.3
2.5
2.7
V
0
0
0
V
Input high voltage
2.0
—
V
CC
+ 0.3
0.4
V
Input low voltage
–0.2
—
V
1
Ambient temperature range
Note:
1. V
IL
min: –1.5 V for pulse half-width
≤
30 ns.
0
—
70
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62Y16258BLTT-8SL | x16 SRAM |
| HM63021P-28 | Field/Frame/Line Memory |
| HM63021P-34 | Field/Frame/Line Memory |
| HM63021P-45 | Field/Frame/Line Memory |
| HM63921P-20 | x9 Asynchronous FIFO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM-630 | 制造商:Black Box Corporation 功能描述:FACE PLATE:HM-STAINLESS |
| HM63021FP | 制造商:Panasonic Industrial Company 功能描述:IC |
| HM63021P-28 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field/Frame/Line Memory |
| HM63021P-34 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field/Frame/Line Memory |
| HM63021P-45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field/Frame/Line Memory |
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