參數(shù)資料
型號(hào): HM66AEB36102BP-60
英文描述: HM66AEB36102/HM66AEB18202 HM66AEB9402 Datasheet
中文描述: HM66AEB36102/HM66AEB18202 HM66AEB9402數(shù)據(jù)表
文件頁(yè)數(shù): 14/32頁(yè)
文件大?。?/td> 251K
代理商: HM66AEB36102BP-60
HM66AEB36102/18202/9402
Rev.0.0, Dec. 2002, page 12 of 30
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Notes
Input voltage on any ball
V
IN
0.5 to V
+ 0.5
(2.9 V max.)
V
1, 4
Input/output voltage
V
I/O
0.5 to V
+ 0.5
(2.9 V max.)
V
1, 4
Core supply voltage
V
DD
V
DDQ
Tj
0.5 to 2.9
0.5 to V
DD
+125 (max)
55 to +125
V
1, 4
Output supply voltage
V
1, 4
Junction temperature
°
C
°
C
Storage temperature
Notes: 1. All voltage is referenced to V
SS
.
2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional
operation should be restricted the Operation Conditions. Exposure to higher than recommended
voltages for extended periods of time could affect device reliability.
3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown
in the tables after thermal equilibrium has been established.
4. The following supply voltage application sequence is recommended: V
, V
, V
, V
then V
IN
.
Remember, according to the Absolute Maximum Ratings table, V
DDQ
is not to exceed 2.9V,
whatever the instantaneous value of V
DDQ
.
T
STG
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol Min
Typ
Max
Unit
Notes
Power supply voltage -- core
V
DD
V
DDQ
V
REF
V
IH (DC)
V
IL (DC)
1.7
1.8
1.9
V
Power supply voltage -- I/O
1.4
1.5
V
DD
0.95
V
Input reference voltage -- I/O
0.68
0.75
V
1
Input high voltage
V
REF
+ 0.1
0.3
V
DDQ
+ 0.3
V
REF
0.1
V
2, 3
Input low voltage
Notes: 1. Peak to peak AC component superimposed on V
REF
may not exceed 5% of V
REF
.
2. V
REF
=
0.75 V (typ).
3. Overshoot: V
IH (AC)
V
DD
+ 0.7 V for t
t
/2
Undershoot: V
IL (AC)
0.5 V for t
t
KHKH
/2
Power-up: V
+ 0.3 V and V
1.7 V and V
DDQ
1.4 V for t
200 ms
During normal operation, V
must not exceed V
.
Control input signals may not have pulse widths less than t
KHKL
(min) or operate at cycle rates less
than t
KHKH
(min).
V
2, 3
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