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參數(shù)資料
| 型號： | HMC-APH510 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.76 X 0.92 MM, 0.10 MM HEIGHT, DIE-9 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HMC-APH510 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 - 40 GHz
v03.0709
General Description
Features
Functional Diagram
Output IP3: +35 dBm
P1dB: +26 dBm
Gain: 20 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.76 x 0.92 x 0.1 mm
Typical Applications
This HMC-APH510 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
The HMC-APH510 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 37 and 40 GHz. The HMC-
APH510 provides 20 dB of gain, and an output power
of +26 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for
reliable
operation.
The
HMC-APH510
GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-APH510
Electrical Specifications
, T
A = +25° C,
Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA [2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
37 - 40
GHz
Gain
18
20
dB
Input Return Loss
16
dB
Output Return Loss
7dB
Output power for 1dB Compression (P1dB)
25
26
dBm
Output Third Order Intercept (IP3)
33
35
dBm
Supply Current (Idd1+Idd2+Idd3)
640
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd
total = 640 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC-APH510-SX | 功能描述:IC RF AMP DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:37GHz ~ 40GHz P1dB:26dBm 增益:20dB 噪聲系數(shù):- RF 類型:通用 電壓 - 電源:5V 電流 - 電源:640mA 測試頻率:37GHz ~ 40GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-APH518 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz |
| HMC-APH596 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz |
| HMC-APH596-SX | 功能描述:RF Amplifier IC VSAT, DBS 16GHz ~ 33GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:16GHz ~ 33GHz P1dB:24dBm 增益:17dB 噪聲系數(shù):- RF 類型:VSAT，DBS 電壓 - 電源:5V 電流 - 電源:400mA 測試頻率:16GHz ~ 33GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-APH608 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 22.5 - 26.5 GHz |
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