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參數(shù)資料
| 型號(hào)： | HMC-AUH232 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.10 X 1.70 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大小： | 394K |
| 代理商： | HMC-AUH232 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Device Mounting
1 mil diameter wire bonds are used on Vgg1 and Vgg2 connections to the capacitors and 27Ω resistors.
0.5mil x 3mil ribbon bonds are used on RF connections
Capacitors and resistors on Vgg1 and Vgg2 are used to filter low frequency, <800MHz, RF pickup
35Ω and 50Ω resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high
frequency termination.
For best gain flatness and group delay variation, eccosorb can be epoxied on the transmission line
covering the center 3/4 of the transmission line length. Eccosorb may also be placed partially across the
Vg1 pad and 35Ω resistor for improved gain flatness and group delay variation.
(The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple)
Silver-filled conductive epoxy is used for die attachment
(Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias)
Device Operation
These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
The input to this device should be AC-coupled. To provide the typical 8Vpp output voltage swing, a 2.7Vpp AC-cou-
pled input voltage swing is required. At this output level, the device will be in 1dB to 3dB of compression.
Device Power Up Instructions
1. Ground the device
2. Bring Vgg1 to -0.5V (no drain current)
3. Bring Vgg2 to +1.5V (no drain current)
4. Bring Vdd to +5V (150mA to 225mA drain current)
(Initially the drain current will rise sharply with a small drain voltage, but will will flatten out as Vdd approaches 5V)
Vgg1 may be varied between -1V and 0V to provide the desired eye crossing point percentage
(i.e. 50% crosspoint) and a limited cross point control capability.
Vdd may be increased to +5.5V if required to achieve greater output voltage swing.
Vgg2 may be adjusted between +1.5V and +0.3V to vary the output voltage swing.
Device Power Down Instructions
1. Reverse the sequence identified above in steps 1 through 4.
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
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| HMC-C001 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C009 | 4000 MHz - 8500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 9.5 dB CONVERSION LOSS-MAX |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC-AUH232_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz |
| HMC-AUH249 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH249_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH256 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
| HMC-AUH256_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
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