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參數(shù)資料
| 型號(hào)： | HMC203 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 混頻器 |
| 英文描述： | 14000 MHz - 23000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10 dB CONVERSION LOSS-MAX |
| 封裝： | MINIATURE, DIE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 101K |
| 代理商： | HMC203 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number
Function
Description
Interface Schematic
1RF
This pin is AC coupled
and matched to 50 Ohms.
2LO
This pin is AC coupled
and matched to 50 Ohms.
3IF
This pin is DC coupled. For applications not requiring operation to
DC, this port should be DC blocked externally using a series capacitor
whose value has been chosen to pass the necessary IF frequency
range. For operation to DC, this pin must not source/sink more than 2
mA of current or die non-function and possible die failure will result.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC203
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
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| HMC203_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz |
| HMC203_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz |
| HMC204 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT |
| HMC204_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT |
| HMC204_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT |
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