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參數(shù)資料
| 型號(hào)： | HMC258 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類(lèi)： | 混頻器 |
| 英文描述： | 14000 MHz - 21000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 13.5 dB CONVERSION LOSS-MAX |
| 封裝： | 1.15 X 0.85 MM, 0.10MM HEIGHT, DIE-4 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | HMC258 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutuctically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows
a typical assembly for the HMC258 MMIC chip.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Figure 3: Typical HMC258 Assembly
HMC258
v03.1007
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC258_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz |
| HMC258CB1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| HMC258LC3B | 制造商:Hittite Microwave Corp 功能描述:IC MIXER SUB-HARMONIC 12SMD |
| HMC258LC3B_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz |
| HMC258LM3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz |
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