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參數(shù)資料
| 型號： | HMC261 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.70 X 1.30 MM, DIE-4 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 319K |
| 代理商： | HMC261 |
MICROWAVE CORPORATION
1 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
AMPLIFIERS
-
CHIP
1
HMC261
v01.0500
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
MMIC Assembly Techniques for HMC261
The die should be attached directly to the ground plane eutec-
tically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick
alumina thin lm substrates are recommended for bringing RF to
and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin
lm substrates must be used, the die should be raised 0.150mm
(6 mils) so that the surface of the die is coplanar with the sur-
face of the substrate. One way to accomplish this is to attach the
0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum
heat spreader (moly-tab) which is then attached to the ground
plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire
length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutecti-
cally or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
Figure 3: Typical HMC261 Assembly
DISCONTINUED
PRODUCT
Not
Recommended
for New
Designs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC261_00 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz |
| HMC261_02 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz |
| HMC261LM1 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz |
| HMC261LM1_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz |
| HMC262 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
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