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參數(shù)資料
| 型號： | HMC283 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 17000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.72 X 0.88 MM, 0.10 MM HEIGHT, DIE-11 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 331K |
| 代理商： | HMC283 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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-55 C
+85 C
+25 C
HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general
Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical
die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100pF single layer capacitors (mounted eutectically
or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The photo in
figure 3 shows a typical assembly for the HMC283 MMIC chip.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen
gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320
°C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to
the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into
position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure
gold wire (DC Bias) or ribbon bond (RF ports) 0.076mm x
0.013mm (3 mil x 0.5 mil) size is recommended. Thermosonic
wirebonding with a nominal stage temperature of 150 °C and
a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
HMC283 Alternate Applications:
-10
-7
-4
-1
2
5
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15
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25
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40
+10 dBm
+15 dBm
+18 dBm
CONVERSION
LOSS
(dB)
OUTPUT FREQUENCY (GHz)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC283_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283LM1 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC283LM1_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
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