參數(shù)資料
型號: HMC498LC4
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 4 X 4 MM, ROHS COMPLIANT, LEADLESS, SMT, 24 PIN
文件頁數(shù): 4/6頁
文件大小: 225K
代理商: HMC498LC4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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11 - 285
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 18 mW/°C above 85 °C)
1.62 W
Thermal Resistance
(channel to ground paddle)
55.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (Vdc)
Idd (mA)
+4.5
239
+5.0
250
+5.5
262
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 250 mA at +5V.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
HMC498LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
v02.1208
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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