參數(shù)資料
型號(hào)： HMC499
廠商： HITTITE MICROWAVE CORP
元件分類： 放大器
英文描述： 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 2.04 X 1.09 MM, 0.10 MM HEIGHT, DIE-6
文件頁數(shù)： 4/6頁
文件大?。?/td> 257K
代理商： HMC499
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc)
+20 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 16.7 mW/°C above 85 °C)
1.50 W
Thermal Resistance
(channel to die bottom)
60 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (Vdc)
Idd (mA)
+4.5
193
+5.0
200
+5.5
207
+3.0
191
+3.5
200
+4.0
208
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 200 mA at +5V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
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