- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65469 > HMC520 (HITTITE MICROWAVE CORP) 6000 MHz - 10000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX PDF資料下載
參數(shù)資料
| 型號： | HMC520 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 混頻器 |
| 英文描述： | 6000 MHz - 10000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| 封裝： | DIE-6 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HMC520 |
M
IX
E
R
S
-
I/
Q
,I
R
MS
-C
H
IP
2
2 - 69
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC521 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC522LC4 | 11000 MHz - 16000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC527LC4 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC527 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC532LP4E | 7100 MHz - 7900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC520_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q MIXER 6 - 10 GHz |
| HMC520ALC4 | 功能描述:IC MMIC IQ MIXER 24LCC 制造商:analog devices inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 RF 類型:VSAT 頻率:6GHz ~ 10GHz 混頻器數(shù):2 增益:- 噪聲系數(shù):- 輔助屬性:- 電流 - 電源:- 電壓 - 電源:- 封裝/外殼:24-CLCC 裸露焊盤 供應(yīng)商器件封裝:24-LCC（4x4） 標(biāo)準(zhǔn)包裝:1 |
| HMC520ALC4TR | 功能描述:IC MMIC IQ MIXER 24LCC 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 RF 類型:VSAT 頻率:6GHz ~ 10GHz 增益:- 噪聲系數(shù):- 輔助屬性:- 電流 - 電源:- 電壓 - 電源:- 封裝/外殼:24-CLCC 裸露焊盤 供應(yīng)商器件封裝:24-LCC（4x4） 標(biāo)準(zhǔn)包裝:1 |
| HMC520LC4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q MIXER 6 - 10 GHz |
| HMC520LC4_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q MIXER 6 - 10 GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。