參數(shù)資料
型號(hào): HMC580ST89ETR
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 203K
代理商: HMC580ST89ETR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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G
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IN
BL
OC
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8
8 - 148
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 1.8 Ohms
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
0.3
0.5
0.8
1
1.3
1.5
+25C
+85C
-40C
P1dB
(dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
0
0.25
0.5
0.75
1
1.25
1.5
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
0
0.25
0.5
0.75
1
1.25
1.5
+25C
+85C
-40C
IP3
(dBm)
FREQUENCY (GHz)
78
80
82
84
86
88
90
92
94
4.82
4.83
4.84
4.85
4.86
4.87
Icc
(mA)
Vcc (V)
+85C
+25C
-40C
ACPR vs. Channel Output Power
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
2468
10
12
14
16
18
WCDMA 140MHz
WCDMA 400MHz
CDMA2000 140MHz
CDMA2000 400MHz
ACPR
(dBc)
CHANNEL OUTPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
36
4.5
5
5.5
Gain
P1dB
Psat
IP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
IP3
(dBm)
Vs (V)
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
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