參數(shù)資料
型號(hào)： HMC591LP5E
廠商： HITTITE MICROWAVE CORP
元件分類(lèi)： 放大器
英文描述： 6000 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-32
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 267K
代理商： HMC591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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11 - 307
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1, 2, 6 - 8,
10 - 12, 14, 15,
17 - 19, 23, 24,
26, 27, 29 - 31
N/C
Not connected.
3, 5, 20, 22
GND
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
4RFIN
This pad is AC coupled and
matched to 50 Ohms.
9Vgg
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of
100 pF and 2.2 μF are required.
13, 16, 25, 28, 32
Vdd 1-5
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 μF are required.
21
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
HMC591LP5 / 591LP5E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HMC592_09 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz
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