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參數(shù)資料
| 型號(hào)： | HMC616LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, PLASTIC, QFN-16 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 763K |
| 代理商： | HMC616LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6 V
rf input power (rfiN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 8.93 mw/°C above 85 °C)
0.58 w
Thermal resistance
(channel to ground paddle)
112 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Vdd (V)
idd (mA)
2.7
20
3.0
30
3.3
40
4.5
80
5.0
90
5.5
100
Note: Amplifier will operate over full voltage range shown above.
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (V)
rbias ()
idd (mA)
min
max
recommended
3V
1k [1]
open Circuit
2.7k
27
3.92k
31
4.7k
33
10k
39
5V
0
open Circuit
820
73
2k
84
3.92k
91
10k
95
[1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC616LP3_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz |
| HMC616LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC616LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC617LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz |
| HMC617LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
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