參數(shù)資料
型號(hào): HMC740ST89E
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 50 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 917K
代理商: HMC740ST89E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC740ST89E
v01.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Outline Drawing
part number
package Body material
lead finish
msl rating
package marking [1]
Hmc740sT89e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
H740
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °c
Package Information
Absolute Maximum Ratings
collector Bias voltage (vcc)
+5.5 vdc
rf input power (rfin)
+15 dBm
Junction Temperature
150 °c
continuous pdiss (T = 85 °c)
(derate 7.14 mW/°c above 85 °c)
0.46 W
Thermal resistance
(junction to lead)
140 °c/W
storage Temperature
-65 to +150 °c
operating Temperature
-40 to +85 °c
esD sensitivity (HmB)
class 1c
elecTrosTATic sensiTive Device
oBserve HAnDlinG precAUTions
noTes:
1. pAckAGe BoDY mATeriAl:
molDinG compoUnD mp-180s or eQUivAlenT.
2. leAD mATeriAl: cu w/ Ag spoT plATinG.
3. leAD plATinG: 100% mATTe Tin.
4. Dimensions Are in incHes [millimeTers]
5. Dimension Does noT inclUDe molDflAsH of 0.15mm per siDe.
6. Dimension Does noT inclUDe molDflAsH of 0.25mm per siDe.
7. All GroUnD leADs mUsT Be solDereD To pcB rf GroUnD.
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參數(shù)描述
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HMC741ST89_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
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HMC741ST89E_10 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 a?? 3 GHz