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參數(shù)資料
| 型號： | HMC797LP5E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 786K |
| 代理商： | HMC797LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC797LP5E
v01.1010
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Outline Drawing
noTes:
1. pACKAGe BoDY mATeriAl: AlUminA
2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinCHes GolD oVer
50 miCroinCHes minimUm niCKel.
3. Dimensions Are in inCHes [millimeTers].
4. leAD spACinG TolerAnCe is non-CUmUlATiVe
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm DATUm -C-
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD
To pCB rf GroUnD.
7. ClAssifieD As moisTUre sensiTiViTY leVel (msl) 1.
part number
package Body material
lead finish
msl rating
package marking [1]
HmC797lp5e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
H797
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °C
Package Information
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
12 V
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
for Vdd = 12V, Vgg2 = 5.5V,
idd <340mA
for Vdd between 8.5V - 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
for Vdd < 8.5V,
Vgg2 must remain > 2V
rf input power (rfin)
+23 dBm
Channel Temperature
150 °C
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
Vdd (V)
idd (mA)
+9
400
+10
400
+11
400
Typical Supply Current vs. Vdd
Continuous pdiss (T= 85 °C)
(derate 69 mw/°C above 85 °C)
4.5 w
Thermal resistance
(channel to ground paddle)
14.6 °C/w
output power into Vswr >7:1
+29 dBm
storage Temperature
-65 to 150 °C
operating Temperature
-55 to 85 °C
esD sensitivity (HBm)
Class 1A
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