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參數(shù)資料
| 型號： | HMC995LP5GE |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 858K |
| 代理商： | HMC995LP5GE |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC995LP5GE
v00.0611
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Pin Descriptions
pin number
function
Description
interface schematic
1-3, 9, 14
17-19, 23, 24
n/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected to
rf/DC ground externally.
4
rfin
This pad is DC coupled and matched to 50 ohms.
5, 15
GnD
These pins and package bottom must be
connected to rf/DC ground.
6-8
Vgg1, Vgg2
Vgg3
Gate control for amplifier. external bypass capacitors of
100pf, 10nf and 4.7uf are required. please follow “mmiC
Amplifier Biasing proceedure” App note.
10, 11
20-22
Vdd1, Vdd2,
Vdd3, Vdd4, Vdd5
Drain bias voltage for the amplifier. external bypass
capacitors of 100pf, 10nf and 4.7f capacitors are
required.
12
Vref
DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet. see Application
Circuit.
13
Vdet
DC voltage representing rf output power rectified by diode
which is biased through an external resistor. see Appilation
Circuit.
16
rfoUT
This pin is DC coupled and matched to 50 ohms.
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| HMC995LP5GE_12 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT |
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