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參數(shù)資料
| 型號： | HMMC-5023 |
| 元件分類： | 放大器 |
| 英文描述： | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.074 X 0.0236 INCH, DIE |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | HMMC-5023 |
3
Applications
The HMMC-5023 low noise
amplifier (LNA) is designed for
use in digital radio communica-
tion systems that operate within
the 21.2 GHz to 23.6 GHz and
24.5 to 26.5 GHz frequency
bands. High gain and low noise
temperature make it ideally
suited as a front-end gain stage.
The MMIC solution is a cost
effective alternative to hybrid
assemblies.
Biasing and Operation
The HMMC-5023 has four cas-
caded gain stages as shown in
Figure 1. The first two gain
stages at the input are biased
with the V
D1 drain supply.
Similarly the two output stages
are biased with the V
D2 supply.
Standard LNA operation is with
a single positive DC drain supply
voltage (V
D1=VD2 = 5 V) using the
assembly diagram shown in
Figure 8(a). If desired, the output
stage DC supply voltage (V
D2) can
be increased to improve output
power capability while maintain-
ing optimum low noise bias
conditions for the input section.
The output power may also be
adjusted by applying a positive
voltage at V
G2 to alter the operat-
ing bias point for both output
FETs. Increasing the voltage
applied to V
G2 (more positively)
results in a more negative gate-
to-source voltage and, therefore,
lower drain current. Figures 8(b)
and 8(c) illustrate how the device
can be assembled for both
independent drain supply
operation and for output-stage
gate bias control. No ground
wires are required since ground
connections are made with
plated through-holes to the
backside of the device.
Assembly Techniques
It is recommended that the RF
input and RF output connections
be made using either 500 line/
inch (or equivalent) gold wire
mesh, or dual 0.7 mil diameter
gold wire. The RF wires should
INPUT STAGE
OUTPUT STAGE
IN
VG1
VD1
92
OUT
VG2
VD2
92
Figure 1. HMMC-5023 Simplified Schematic Diagram.
be kept as short as possible to
minimize inductance. The bias
supply wire can be a 0.7 mil
diameter gold wire attached to
either of the V
DD bonding pads.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References:
AN# 7, “HMMC-5023 32 GHz
Noise Figure Measurements,”
AN# 11, “HMMC-5023 as a
Doubler to 24 and 28 GHz,” and
AN# 13, “HMMC-5023 Configured
as a Gain Control Device at 24
and 28 GHz.”
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