參數(shù)資料
型號: HMMC-5025
廠商: AGILENT TECHNOLOGIES INC
元件分類: 放大器
英文描述: 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 0.0677 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE
文件頁數(shù): 7/8頁
文件大?。?/td> 589K
代理商: HMMC-5025
7
Figure 6. Typical Small-Signal Gain vs. Temperature
Figure 7. Typical Gain vs. Second Gate Control Voltage
Figure 8. Typical 1 dB Gain Compression and Saturated Output
Power vs. Frequency
Figure 9. Typical Second and Third Harmonics vs. Fundamental
Frequency at Pout = 10 dBm
This data sheet contains a variety of typical and guaranteed performance
data. The information supplied should not be interpreted as a complete
list of circuit specications. Customers considering the use of this, or
other TCA GaAs ICs, for their design should obtain the current produc-
tion specications from Agilent TCA Marketing. In this data sheet the
term typical refers to the 50th percentile performance. For additional
information contact Agilent TCA Marketing at 707-577-4482.
Figure 10. Typical Noise Figure Performance vs. Frequency.
Notes:
All data measured on individual devices mounted in a 50 GHz
test package TA = 25°C (except where noted).
Additional Performance Characteristics
Small–Signal
Gain,
S
21
(dB)
Frequency (GHz)
20
10
0
-10
-20
-30
(VDD = 5.0 V, VG1 = - 0 .66 V)
VG2
(V)
+2.0
-1.0
-1.5
-2.0
-2.5
-3.0
75
59
47
34
24
16
IDD
(mA)
2
6
10
14
18
22
26
30
34
38
42
46 50
(VDD = 5.0 V, IDD = 75 mA)
TA
(°C)
Small–Signal
Gain,
S
21
(dB)
Frequency (GHz)
13
12
11
10
9
8
7
6
5
4
3
-55
-25
0
+25
+55
+85
+100
2
6
10
14
18
22
26
30
34
38
42
46
50
.019 dB/°C
.029 dB/°C
.039 dB/°C
Output
Power
(dBm)
Frequency (GHz)
18
16
14
12
10
8
6
4
(VDD = 5.0 V, IDD (Q) = 75 mA)
P(sat)
P(-1 dB)
2
6
10
14
18
22
26
30
34
38
42
46 50
Harmonics
(dBc)
Fundamental Frequency, o (GHz)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
(VDD = 5.0 V, IDD (Q) = 75 mA)
2nd Harm.
3rd Harm.
2
3
4
5
6
7
8
9
10
11
12
13 14
Noise
Figure
(dB)
Associated
Gain
(dB)
Frequency (GHz)
6
5
4
3
2
1
13
11
9
7
5
2
4
6
8
10
12 14
16
18
20
22
24 26.5
Nominal Bias:
(VDD = 5.0 V, IDD = 75 mA)
Optimal NF Bias:
(VDD = 2.25 V, IDD = 26 mA)
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