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參數(shù)資料
| 型號(hào)： | HMMC-5025 |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0362 INCH, DIE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | HMMC-5025 |
3
Application
The HMMC-5025 traveling wave
amplifier is designed for use as a
general purpose wideband power
stage in communication systems,
and microwave instrumentation,
and optical systems. It is ideally
suited for broadband applica-
tions requiring a flat gain re-
sponse and excellent port
matches over a 2 to 50 GHz fre-
quency range. Dynamic gain con-
trol and low-frequency extension
capabilities are designed into
these devices.
Biasing and Operation
The recommended bias condi-
tions for best performance for
the HMMC-5025 are V
DD = 5.0 V,
I
DD = 75 mA. To achieve these
drain current levels, V
G1 is
typically biased between -0.2V
and -0.6V. No other bias supplies
or connections to the device are
required for 2 to 50 GHz opera-
tion. The gate voltage (V
G1)
should be applied prior to the
drain voltage (V
DD) during power
up and removed after the drain
voltage during power down.
The HMMC-5025 is a DC coupled
amplifier. External coupling
capacitors are needed on RF
IN
and RF
OUT ports. The drain bias
pad is connected to RF and must
be decoupled to the lowest
operating frequency.
The auxiliary gate and drain
contacts are provided when
performance below 1 GHz in
required. Connect external
capacitors to ground to maintain
input and output VSWR at low
frequencies (see Additional
References). Do not apply bias to
these pads.
The second gate (V
G2) can be
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact.
Gate
Bias
Low Frequency
Extension
Second Gate
Bias
RF OUTPUT
Low Frequency
Extension
15
1.5
470
8.5
RF INPUT
GND
340
50
350
9.2
50
8.5
6
Drain
Bias
Seven Identical Stages
Figure 1. HMMC-5025 Schematic.
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References:
AN #1053, “Designing with
HMMC-5021, -5022, -5026, and
-5027 GaAs MMIC Amplifiers.”
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5021 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5027 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5032 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5032 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
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