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參數(shù)資料
| 型號(hào)： | HMMC-5032 |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.0551 X 0.0307 INCH, DIE |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 156K |
| 代理商： | HMMC-5032 |
3
Applications
The HMMC-5032 MMIC is a broad-
band power amplifier designed for
use in transmitters that operate in
various frequency bands between
17.7 GHz and 32 GHz. It can be
attached to the output of the
HMMC-5040 (20 – 40 GHz) or the
HMMC-5618 (5.9 – 20 GHz) MMIC
amplifier, increasing the power
handling capability of transmitters
requiring linear operation.
Biasing and Operation
The recommended DC bias con-
dition is with both drains (V
D1
and V
D2) connected to single
4.5 volt supply and both gates
(V
G1 and VG2) connected to an
adjustable negative voltage
supply. The gate voltage is
adjusted for a total drain supply
current of typically 250 mA.
The RF input and output are
AC-coupled.
An optional output power
detector network is also pro-
vided. Detector sensitivity can be
adjusted by biasing the diodes
with typically 1 to 5 volts applied
to the Det-Bias terminal. Simply
connecting Det-Bias to the V
D2
supply is a convenient method of
biasing this detector network.
The differential voltage between
the Det-Ref and Det-Out bonding
pads can be correlated to the RF
power emerging from the RF
Output port.
No ground wires are needed
because ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
It is recommended that the elec-
trical connections to the bonding
pads be made using 0.7 –1.0 mil
diameter gold wire. The micro-
wave/millimeter-wave connec-
tions should be kept as short as
VD2
Det. Bias
VD1
VG2
Det. Ref.
Det. Out
VG1
R1 = 10 K
Stage 1
Stage 2
Ref. D2
R1
C
RF Input
RF Output
D1
Figure 1. HMMC-5032 Simplified Schematic Diagram.
possible to minimize inductance.
For assemblies requiring long
bond wires, multiple wires can be
attached to the RF bonding pads.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References
PN# 3, “HMMC-5040 and
HMMC-5032 Demo, 20-32 GHz
High Gain Medium Power Amp,”
and PN# 4, “HMMC-5032
Intermodulation Distortion.”
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5033 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5200 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
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