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參數(shù)資料
| 型號： | HMMC-5040 |
| 英文描述： | 20-40 GHz Broadband MMIC Amplifier(20-40 GHz寬頻單片微波集成電路放大器) |
| 中文描述： | 20-40 GHz的寬帶MMIC放大器（20-40千兆赫寬頻單片微波集成電路放大器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 88K |
| 代理商： | HMMC-5040 |
2
HMMC-5040 DC Specifications/Physical Properties
[1]
Symbol
Parameters and Test Conditions
V
D1, 2-3-4
Drain Supply Operating Voltages
Units
V
Min.
2
Typ.
4.5
Max.
5
I
D1
First Stage Drain Supply Current
(V
DD
= 4.5 V, V
G1
= -0.6 V)
mA
55
I
D2-3-4
Total Drain Supply Current for Stages 2, 3, and 4
(V
DD
= 4.5 V, V
GG
= -0.6 V)
mA
24.5
V
G1, 2, 3-4
Gate Supply Operating Voltages (I
DD
= 300 mA)
Pinch-off Voltage (V
DD
= 4.5 V, I
DD
≤
10 mA)
Thermal Resistance
[2]
(Channel-to-Backside @ T
ch
= 160
°
C)
Channel Temperature
[3]
(T
A
= 125
°
C, MTTF > 10
6
hrs,
V
DD
= 4.5 V, I
DD
= 300 mA)
V
-0.6
V
p
V
-2
-1.2
-0.8
θ
ch-bs
°
C/W
62
T
ch
°
C
160
Notes:
1. Backside ambient operating temperature T
A
= 25
°
C unless otherwise noted.
2. Thermal resistance (
°
C/Watt) at a channel temperature T (
°
C) can be
estimated
using the equation:
θ
(T)
62 x [T(
°
C)+ 273] / [160
°
C + 273].
3. Derate MTTF by a factor of two for every 8
°
C above T
ch
.
HMMC-5040 RF Specifications,
T
A
= 25
°
C, V
DD
= 4.5 V, I
DD
= 300 mA, Z
o
= 50
Broadband
Specifications
Min.
Typ.
Narrow Band
Performance
Typical
Symbol
Parameters/Conditions
Units
Max.
BW
S
21
S
21
(RL
in
)
MIN
(RL
out
)
MIN
S
12
P
-1dB
Operating Bandwidth
Small Signal Gain
Small Signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Reverse Isolation
Output Power
(@ 1dB Gain Compression)
Saturated Output Power
@ 3 dB Gain Compression
GHz
dB
dB
dB
dB
dB
dBm
21
20
20–44
22
±
1.5
10
10
54
18
40
21–24
25
±
1
9
10
54
18
27–29
23
±
0.75
10
11
54
18
37–40
22
±
0.3
14
12
54
18
8
8
P
sat
dBm
20
21
21
21
21
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