- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370645 > HN58C256AI (Hitachi,Ltd.) 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) PDF資料下載
參數(shù)資料
| 型號(hào)： | HN58C256AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| 中文描述： | 32768字× 8位電可擦除和可編程的CMOS光盤（256k的EEPROM（32K的字× 8位）） |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HN58C256AI |
HN58C256AI Series
6
Write Cycle
Parameter
Symbol
Min*
2
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
0
—
—
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
50
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
Data setup time
50
—
—
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
0
—
—
ns
100
—
—
ns
100
—
—
ns
Data latch time
50
—
—
ns
Byte load cycle
0.2
—
30
μ
s
μ
s
Byte load window
100
—
—
Write cycle time
—
—
10*
3
ms
Time to device busy
120
—
—
ns
Write start time
Notes: 1. t
is defined as the time at which the outputs achieve the open circuit conditions and are no
longer driven.
2. Use this device in longer cycle than this value.
3. t
must be longer than this value unless polling techniques is used. This device automatically
completes the internal write operation within this value.
4. Next read or write operation can be initiated after t
DW
if polling techniques is used.
5. A6 through A14 are page addresses and these addresses are latched at the first falling edge of
WE
.
6. A6 through A14 are page addresses and these addresses are latched at the first falling edge of
CE
.
7. See AC read characteristics.
0*
4
—
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58C256AP-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C257AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256A | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AFP-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AFP-85 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C256AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58C256AP10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-256K CMOS EEPROM |
| HN58C256AP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AP85 | 制造商:Renesas Electronics Corporation 功能描述:EEPROM PARALLEL 256K 58C256 DIP28 |
| HN58C256AP-85 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。