參數(shù)資料
型號(hào): HN58S256AI
廠商: Hitachi,Ltd.
英文描述: 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位))
中文描述: 32768字× 8位電可擦除和可編程的CMOS光盤(pán)(256k的EEPROM(32K的字× 8位))
文件頁(yè)數(shù): 1/19頁(yè)
文件大小: 119K
代理商: HN58S256AI
HN58S256AI Series
32768-word
×
8-bit Electrically Erasable and Programmable
CMOS ROM
ADE-203-669B (Z)
Rev. 2.0
Sep. 17, 1997
Description
The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word
×
8-
bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming
function to make the write operations faster.
Features
Single 3 V supply: 2.2 to 3.6 V
Access time: 150 ns/200 ns (max)
Power dissipation
Active: 10 mW/MHz (typ)
Standby: 36
μ
W (max)
On-chip latches: address, data,
CE
,
OE
,
WE
Automatic byte write: 15 ms (max)
Automatic page write (64 bytes): 15 ms (max)
Data
polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Wide temperature range: – 40 to 85
°
C
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