參數(shù)資料
型號： HQ1L2Q
廠商： NEC Corp.
英文描述： COMPOUND TRANSISTOR
中文描述： 復合晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 111K
代理商： HQ1L2Q
Data Sheet D16183EJ1V0DS
2
HQ1 SERIES
HQ1L2N
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
50
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
1.0 A
150
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
2.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.7 A
0.55
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
329
470
611
k
E-to-B resistance
R
2
0.7
1.0
1.3
**PW
≤
350
μ
s, duty cycle
≤
2 %
HQ1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
50
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
1.0 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
2.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
0.4
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
k
Input resistance
R
1
0.7
1.0
1.3
E-to-B resistance
R
2
0.7
1.0
1.3
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
HQ1F3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
80
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
1.0 A
150
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
2.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.3 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
1.54
2.2
2.86
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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